vishay siliconix SI4910DY document number: 73699 s09-0540-rev. b, 06-apr-09 www.vishay.com 1 dual n-channel 40-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 available ? trenchfet ? power mosfet ? 100 % r g and uis tested applications ? ccfl inverter product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) 40 0.027 at v gs = 10 v 6.0 9.6 0.032 at v gs = 4.5 v 4.8 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top v ie w 2 3 4 1 orderin g information: SI4910DY-t1-e3 (lead (p b )-free) SI4910DY-t1-ge3 (lead (p b )-free and halogen-free) d 1 g 1 s 1 n -channel mosfet d 2 g 2 s 2 n -channel mosfet notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady stat e conditions is 120 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 40 v gate-source voltage v gs 16 continuous drain current (t j = 150 c) t c = 25 c i d 7.6 a t c = 70 c 6.0 t a = 25 c 6.0 b, c t a = 70 c 4.8 b, c pulsed drain current (10 s pulse width) i dm 20 source-drain current diode current t c = 25 c i s 2.6 t a = 25 c 1.6 b, c pulsed source-drain current i sm 20 single pulse avalanche current l = 0.1 mh i as 10 single pulse avalanche energy e as 5 maximum power dissipation t c = 25 c p d 3.1 w t c = 70 c 2 t a = 25 c 2 b, c t a = 70 c 1.28 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient b, d t 10 s r thja 49 62.5 c/w maximum junction-to-foot (drain) steady-state r thjf 30 40
www.vishay.com 2 document number: 73699 s09-0540-rev. b, 06-apr-09 vishay siliconix SI4910DY notes: a. guaranteed by design, not s ubject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. a max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 40 v v ds temperature coefficient v ds /t j i d = 250 a 37 mv/c v gs(th) temperature coefficient v gs(th) /t j - 5 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 2.0 v gate-body leakage i gss v ds = 0 v, v gs = 16 v 100 na zero gate voltage drain current i dss v ds = 40 v, v gs = 0 v 1 a v ds = 40 v, v gs = 0 v, t j = 55 c 10 on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 20 a drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 6 a 0.022 0.027 v gs = 4.5 v, i d = 4.8 a 0.026 0.032 forward transconductance b g fs v ds = 15 v, i d = 6 a 20 s dynamic a input capacitance c iss v ds = 20 v, v gs = 0 v, i d = 1 mhz 855 pf output capacitance c oss 105 reverse transfer capacitance c rss 65 total gate charge q g v ds = 20 v, v gs = 10 v, i d = 5 a 21 32 nc v ds = 20 v, v gs = 4.5 v, i d = 5 a 9.6 14.5 gate-source charge q gs 2.3 gate-drain charge q gd 3.2 gate resistance r g f = 1 mhz 2.5 3.8 tu r n - o n d e l ay t i m e t d(on) v dd = 20 v, r l = 4 i d ? 5 a, v gen = 10 v, r g = 1 612 ns rise time t r 11 20 turn-off delay time t d(off) 24 36 fall time t f 612 tu r n - o n d e l ay t i m e t d(on) v dd = 20 v, r l =4 i d ? 5 a, v gen = 4.5 v, r g = 1 12 20 rise time t r 60 90 turn-off delay time t d(off) 22 33 fall time t f 510 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 2.6 a pulse diode forward current a i sm 20 body diode voltage v sd i s = 1.5 a 0.73 1.2 v body diode reverse recovery time t rr i f = 5 a, di/dt = 100 a/s, t j = 25 c 26 40 ns body diode reverse recovery charge q rr 21 32 nc reverse recovery fall time t a 13 ns reverse recovery rise time t b 13
document number: 73699 s09-0540-rev. b, 06-apr-09 www.vishay.com 3 vishay siliconix SI4910DY typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 v gs = 10 v thr u 3 v 2 v v ds ? drain-to-so u rce v oltage ( v ) ? drain c u rrent (a) i d 04 8 12 16 20 v gs = 10 v i d ? drain c u rrent (a) v gs = 4.5 v r ds(on) ? on-resistance ( ) 0.01 8 0.020 0.022 0.024 0.026 0.02 8 0.030 0 2 4 6 8 10 0.0 4.4 8 . 8 13.2 17.6 22.0 ? gate-to-so u rce v oltage ( v ) q g ? total gate charge (nc) v gs i d = 5 a v ds = 20 v v ds = 10 v v ds = 30 v transfer characteristics capacitance on-resistance vs. junction temperature 0.0 0.4 0. 8 1.2 1.6 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 c t c = 125 c - 55 c v gs ? gate-to-so u rce v oltage ( v ) ? drain c u rrent (a) i d 0 2 8 0 560 8 40 1120 1400 0 8 16 24 32 40 c oss c iss v ds ? drain-to-so u rce v oltage ( v ) c ? capacitance (pf) c rss 0.5 0. 8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 t j ? j u nction temperat u re ( c) r ds(on) ? on-resistance ( n ormalized) v gs = 10 v v gs = 4.5 v i d = 5 a
www.vishay.com 4 document number: 73699 s09-0540-rev. b, 06-apr-09 vishay siliconix SI4910DY typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 1.0 1.2 0.001 0 0.2 0.4 0.6 0. 8 v sd ? so u rce-to-drain v oltage ( v ) ? so u rce c u rrent (a) i s t j = 25 c t j = 150 c 0.1 0.01 1 10 100 - 0. 8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a t j ? temperat u re ( c) v gs(th) v ariance ( v ) i d = 5 ma on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.03 0.06 0.09 0.12 0.15 01234567 8 910 v gs ? gate-to-so u rce v oltage ( v ) r ds(on) ? drain-to-so u rce on-resistance ( ) t a = 25 c t a = 125 c i d = 6 a 0 30 50 10 20 po w er ( w ) time (s) 40 110 0.1 0.01 0.001 safe operating area, junction-to-ambient 0.01 100 1 100 0.01 ? drain c u rrent (a) i d 0.1 v ds ? drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified limited b y r ds(on) * 1 ms 10 ms 100 ms 1 s 10 s 0.1 1 10 10 t a = 25 c single p u lse dc
document number: 73699 s09-0540-rev. b, 06-apr-09 www.vishay.com 5 vishay siliconix SI4910DY typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 2 4 6 8 10 0 255075100125150 i d ? drain c u rrent (a) t c ? case temperat u re (c) power derating, junction-to-foot 0.0 0. 8 1.6 2.4 3.2 4.0 0 25 50 75 100 125 150 t c ? case temperat u re (c) po w er dissipation ( w ) power derating, junction-to-ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 t a ? am b ient temperat u re (c) po w er dissipation ( w )
www.vishay.com 6 document number: 73699 s09-0540-rev. b, 06-apr-09 vishay siliconix SI4910DY typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73699 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 0 0 0 1 0 1 1 10 -1 10 -4 100 0.2 0.1 0.05 0.02 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 110 c/ w 3. t jm ? t a = p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 normalized thermal transient impedance, junction-to-case 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01
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